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Advanced metallization for future ULSI

symposium held April 8-11, 1996, San Francisco, California, U.S.A.
  • 597 Pages
  • 2.29 MB
  • 9672 Downloads
  • English

Materials Research Society , Pittsburgh, Pa
Integrated circuits -- Ultra large scale integration -- Design and construction -- Congresses., Metallizing -- Congresses., Metallic films -- Congresses., Semiconductors -- Design and construction -- Congre
Statementeditors, K.N. Tu ... [et al.].
SeriesMaterials Research Society symposium proceedings ;, v. 427, Materials Research Society symposia proceedings ;, v.427.
ContributionsTu, K. N. 1937-, Materials Research Society. Meeting
Classifications
LC ClassificationsTK7874.76 .A32 1996
The Physical Object
Paginationxiii, 597 p. :
ID Numbers
Open LibraryOL989227M
ISBN 101558993304
LC Control Number96027499

Advanced Metallization for Future ULSI: Volume (MRS Proceedings) [L. Chen, J. Mayer, J. Poate, K. Tu] on *FREE* shipping on qualifying offers. The feature sizes of microelectronic devices have entered the deep submicron regime.

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Advanced metallization for future ULSI: symposium held April, San Francisco, California, U.S.A. Advanced Nanoscale ULSI Interconnects: Fundamental and Applications brings a comprehensive description of copper based interconnect technology for Ultra Large Scale Integration (ULSI) technology to Integrated Circuit (ICs) application.

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Favreau, Berkeley Continuing Education in engineering University of California. Advanced Metallization and Interconnect Systems for ULSI Applications in Volume 12 Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements.

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It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations. Advanced Interconnects for ULSI Technology - ISBN Wet Removal of nm Photoresist Section II Conductive Layers and Barriers 5 Copper Electroplating for On-Chip Metallization Valery M.

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In this book we will review the basic technologies that are used today for copper metallization for ULSI applications: deposition and planarization. Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance.

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Hence future demands on metallization are a big challenge, and silver next to copper is one of the most promising materials for novel metallization schemes. Book of abstracts, Materials for advanced metallization, Stresa, Italy, p. Google by: The Advanced Metallization Conference - held in Albany, New York, and Tokyo, Japan - marked its 24th anniversary in These two sister conferences form a unique "one conference at two sites" that focuses on latest R&D and manufacturing results, as well as real-world integration and reliability data on the application of metallization and related technologies for advanced IC devices.

IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference (IITC/MAM) Grenoble, France IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference (IITC/MAM) IEEE, ().Cited by: 9.

The Advanced Metallization Conference (AMC) marked its twentieth anniversary in Technical leaders from around the world gather to discuss developments in the areas of interconnect performance, advanced metallization, low-dielectric constant materials, barrier metallization, atomic layer deposition, vertical integration, advanced packaging and optical interconnects.

Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.

of nm Photoresist Section II Conductive Layers and Barriers 5 Copper. The effects of SIV include resistance change, void induced open circuits, hillocks, or whisker growth induced shorts between lines or layers.

These can significantly degrade the electrical properties of the ULSI chip, and therefore SIV is also an important reliability concern for advanced copper metallization. Rapid Thermal Processing for Future Semiconductor Devices.

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Book Title:Rapid Thermal Processing for Future Semiconductor Devices. This volume is a collection of papers which were presented at the International Conference on Rapid Thermal Processing (RTP ) held at.

Advanced Interconnects for ULSI Technology Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips. Advanced Metallization Conference (AMC ): Book picture is for illustrative purposes only, This Advanced Metallization comes in full working with.

CMOS/BICMOS ULSI presents state-of-the-art BiCMOS low-voltage, low-power design techniques for ULSI and giga-scale integration engineering, covering process integration, device modeling, and characterization.

Discover the latest MOS and bipolar models; breakthroughs in copper metallization, isolation, and deep submicron processes; and new approaches to designing logic gates, latches, and.

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Tu, "Low Temperature Diffusion and Applications to Thin Films," Elsevier Sequoia, This invaluable resource tells the complete story of failure mechanismsfrom basic concepts to the tools necessary to conduct reliability tests and analyze the results. Both a text and a reference work for this important area of semiconductor technology, it assumes no reliability education or experience.

It also offers the first reference book with all relevant physics, equations, and step-by. New Approaches to Image Processing Based Failure Analysis of Nano-Scale ULSI Devices introduces the reader to transmission and scanning microscope image processing for metal and non-metallic microstructures.

Engineers and scientists face the pressing problem in ULSI development and quality assurance: microscopy methods can't keep pace with the continuous shrinking of feature size in.Advanced Metallization for Future Ulsi: Symposium Held April, San Francisco, California, U.S.A.

Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections.

It begins with the basic knowledge required for .